| Anzahl | Preis |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPCA8045-H(T2L1,VM Toshiba
Description: MOSFET N-CH 40V 46A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPCA8045-H(T2L1,VM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
TPCA8045-H(T2L1,VM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 46A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|
|
TPCA8045-H(T2L1,VM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 46A 8SOPPart Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar |

