auf Bestellung 332 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.8 EUR |
| 16+ | 3.43 EUR |
| 100+ | 2.7 EUR |
| 500+ | 2.2 EUR |
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Technische Details TPCA8045-H(T2L1,VM Toshiba
Description: MOSFET N-CH 40V 46A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V.
Weitere Produktangebote TPCA8045-H(T2L1,VM
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TPCA8045-H(T2L1,VM | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 40V 46A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |
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TPCA8045-H(T2L1,VM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 46A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V |
Produkt ist nicht verfügbar |
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TPCA8045-H(T2L1,VM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 46A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V |
Produkt ist nicht verfügbar |