| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.4 EUR |
| 2500+ | 0.38 EUR |
| 5000+ | 0.32 EUR |
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Technische Details TPCC8093,L1Q Toshiba
Description: MOSFET N-CH 20V 21A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V, Power Dissipation (Max): 1.9W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 500µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V.
Weitere Produktangebote TPCC8093,L1Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
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TPCC8093,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 21A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.9W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TPCC8093,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH