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TPCC8105,L1Q

TPCC8105,L1Q Toshiba

TPCC8105_datasheet_en_20180515-1649721.pdf Hersteller: Toshiba
MOSFET Pb-F POWER MOSFET TRANSISTOR TSON-ADV MOQ=5000 PD=30W F=1MHZ
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
28+1.88 EUR
31+ 1.68 EUR
100+ 1.15 EUR
500+ 0.96 EUR
1000+ 0.81 EUR
2500+ 0.74 EUR
5000+ 0.69 EUR
Mindestbestellmenge: 28
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Technische Details TPCC8105,L1Q Toshiba

Description: PB-F POWER MOSFET TRANSISTOR TSO, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V, Power Dissipation (Max): 700mW (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2V @ 500µA, Supplier Device Package: 8-TSON Advance (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V.

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TPCC8105,L1Q TPCC8105,L1Q Hersteller : Toshiba 739561151681405739557964663721tpcc8105_datasheet_en_20180515.pdf.pdf Trans MOSFET P-CH Si 30V 23A 8-Pin TSON EP Advance T/R
Produkt ist nicht verfügbar
TPCC8105,L1Q TPCC8105,L1Q Hersteller : Toshiba 739561151681405739557964663721tpcc8105_datasheet_en_20180515.pdf.pdf Trans MOSFET P-CH Si 30V 23A 8-Pin TSON EP Advance T/R
Produkt ist nicht verfügbar
TPCC8105,L1Q Hersteller : Toshiba Semiconductor and Storage TPCC8105_datasheet_en_20180515.pdf?did=6229&prodName=TPCC8105 Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Produkt ist nicht verfügbar
TPCC8105,L1Q Hersteller : Toshiba Semiconductor and Storage TPCC8105_datasheet_en_20180515.pdf?did=6229&prodName=TPCC8105 Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Produkt ist nicht verfügbar