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TPCC8105,L1Q

TPCC8105,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=6229&prodName=TPCC8105
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
auf Bestellung 2992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
18+0.98 EUR
100+0.68 EUR
500+0.6 EUR
1000+0.51 EUR
2000+0.5 EUR
Mindestbestellmenge: 13
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Technische Details TPCC8105,L1Q Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR TSO, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V, Power Dissipation (Max): 700mW (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2V @ 500µA, Supplier Device Package: 8-TSON Advance (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V.

Weitere Produktangebote TPCC8105,L1Q nach Preis ab 0.47 EUR bis 1.95 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TPCC8105,L1Q TPCC8105,L1Q Hersteller : Toshiba 5B53E30C93F52F4B5B7542976381934CE1573CC3A7B47B6E6F36F4D5BEFAFFE0.pdf MOSFETs Pb-F POWER MOSFET TRANSISTOR TSON-ADV MOQ=5000 PD=30W F=1MHZ
auf Bestellung 2456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.95 EUR
10+1.23 EUR
100+0.81 EUR
500+0.62 EUR
1000+0.52 EUR
2500+0.51 EUR
5000+0.47 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPCC8105,L1Q TPCC8105,L1Q Hersteller : Toshiba 739561151681405739557964663721tpcc8105_datasheet_en_20180515.pdf.pdf Trans MOSFET P-CH Si 30V 23A 8-Pin TSON EP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPCC8105,L1Q TPCC8105,L1Q Hersteller : Toshiba 739561151681405739557964663721tpcc8105_datasheet_en_20180515.pdf.pdf Trans MOSFET P-CH Si 30V 23A 8-Pin TSON EP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPCC8105,L1Q TPCC8105,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=6229&prodName=TPCC8105 Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH