TPCP8005-H(TE85L,F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 30V 11A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details TPCP8005-H(TE85L,F Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A PS-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V, Power Dissipation (Max): 840mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: PS-8 (2.9x2.4), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V.
Weitere Produktangebote TPCP8005-H(TE85L,F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
TPCP8005-H(TE85L,F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 11A PS-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PS-8 (2.9x2.4) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V |
Produkt ist nicht verfügbar |