auf Bestellung 2018 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
21+ | 2.51 EUR |
26+ | 2.07 EUR |
100+ | 1.61 EUR |
500+ | 1.37 EUR |
1000+ | 1.12 EUR |
3000+ | 1.05 EUR |
6000+ | 1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPCP8011,LF Toshiba
Description: PB-F POWER MOSFET TRANSISTOR PS-, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V, Power Dissipation (Max): 940mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: PS-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote TPCP8011,LF nach Preis ab 1.11 EUR bis 2.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TPCP8011,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR PS- Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PS-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) |
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TPCP8011,LF | Hersteller : Toshiba | Trans MOSFET N-CH Si 40V 5A 8-Pin PS T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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TPCP8011,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR PS- Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PS-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |