| Anzahl | Preis |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.68 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.8 EUR |
| 3000+ | 0.7 EUR |
| 6000+ | 0.68 EUR |
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Technische Details TPCP8011,LF Toshiba
Description: PB-F POWER MOSFET TRANSISTOR PS-, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PS-8, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 940mW (Ta), Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPCP8011,LF nach Preis ab 0.75 EUR bis 1.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TPCP8011,LF | Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR PS-Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PS-8 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPCP8011,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR PS-
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PS-8
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: PB-F POWER MOSFET TRANSISTOR PS-
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PS-8
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.71 EUR |
| 13+ | 1.4 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.75 EUR |