TPCP8J01(TE85L,F,M Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 32V 5.5A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 32 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details TPCP8J01(TE85L,F,M Toshiba Semiconductor and Storage

Description: MOSFET P-CH 32V 5.5A PS-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V, Power Dissipation (Max): 2.14W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: PS-8, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 32 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V.

Weitere Produktangebote TPCP8J01(TE85L,F,M

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TPCP8J01(TE85L,F,M TPCP8J01(TE85L,F,M Hersteller : Toshiba TPCP8J01_datasheet_en_20180515-1134450.pdf MOSFET MOSFET P-CH/NPN 32V, 6A
Produkt ist nicht verfügbar