TPCP8J01(TE85L,F,M Toshiba Semiconductor and Storage

Description: MOSFET P-CH 32V 5.5A PS-8, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 32 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: PS-8, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 2.14W (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), FET Type: P-Channel.