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TPH11003NL,LQ

TPH11003NL,LQ Toshiba Semiconductor and Storage

TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
21+0.84 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.4 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH11003NL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 30V 32A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V, Power Dissipation (Max): 1.6W (Ta), 21W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V.

Weitere Produktangebote TPH11003NL,LQ nach Preis ab 0.54 EUR bis 1.8 EUR

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TPH11003NL,LQ TPH11003NL,LQ Hersteller : Toshiba TPH11003NL_datasheet_en_20140217-1915985.pdf MOSFETs N-Ch DTMOS VII-H 21W 510pF 32A 30V
auf Bestellung 2854 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.8 EUR
10+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPH11003NL,LQ TPH11003NL,LQ Hersteller : Toshiba Semiconductor and Storage TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL Description: MOSFET N CH 30V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH