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TPH11006NL,LQ

TPH11006NL,LQ Toshiba Semiconductor and Storage

TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.63 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH11006NL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 17A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Power Dissipation (Max): 1.6W (Ta), 34W (Tc), Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote TPH11006NL,LQ nach Preis ab 0.6 EUR bis 0.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TPH11006NL,LQ TPH11006NL,LQ Toshiba TPH11006NL_datasheet_en_20140225-1915955.pdf MOSFETs U-MOSVIII-H 60V 40A 23nC MOSFET
auf Bestellung 88832 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.74 EUR
10+0.71 EUR
100+0.68 EUR
500+0.67 EUR
3000+0.61 EUR
6000+0.6 EUR
Mindestbestellmenge: 5 Stücke
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TPH11006NL,LQ TPH11006NL,LQ Toshiba Semiconductor and Storage TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 29746 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
100+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 23 Stücke
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TPH11006NL,LQ Toshiba TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL Trans MOSFET N-CH Si 60V 40A 8-Pin SOP Advance T/R
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TPH11006NL,LQ TPH11006NL_datasheet_en_20140225-1915955.pdf
TPH11006NL,LQ
Hersteller: Toshiba
MOSFETs U-MOSVIII-H 60V 40A 23nC MOSFET
auf Bestellung 88832 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.74 EUR
10+0.71 EUR
100+0.68 EUR
500+0.67 EUR
3000+0.61 EUR
6000+0.6 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH11006NL,LQ TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL
TPH11006NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 29746 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
100+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH11006NL,LQ TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL
Hersteller: Toshiba
Trans MOSFET N-CH Si 60V 40A 8-Pin SOP Advance T/R
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH