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TPH11006NL,LQ

TPH11006NL,LQ Toshiba Semiconductor and Storage

TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.53 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH11006NL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 17A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V, Power Dissipation (Max): 1.6W (Ta), 34W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V.

Weitere Produktangebote TPH11006NL,LQ nach Preis ab 0.53 EUR bis 0.77 EUR

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TPH11006NL,LQ TPH11006NL,LQ Hersteller : Toshiba TPH11006NL_datasheet_en_20140225-1915955.pdf MOSFETs U-MOSVIII-H 60V 40A 23nC MOSFET
auf Bestellung 88932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.69 EUR
10+0.66 EUR
25+0.65 EUR
100+0.62 EUR
1000+0.61 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TPH11006NL,LQ TPH11006NL,LQ Hersteller : Toshiba Semiconductor and Storage TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 29746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
100+0.64 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
TPH11006NL,LQ TPH11006NL,LQ Hersteller : Toshiba 475tph11006nl_datasheet_en_20140225.pdf.pdf Trans MOSFET N-CH Si 60V 40A 8-Pin SOP Advance T/R
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Im Einkaufswagen  Stück im Wert von  UAH