| Anzahl | Preis |
|---|---|
| 1+ | 4.72 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.76 EUR |
| 5000+ | 1.48 EUR |
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Technische Details TPH1100CQ5,LQ Toshiba
Description: 150V UMOS10-H SOP ADVANCE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V, Power Dissipation (Max): 3W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 800µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V.
Weitere Produktangebote TPH1100CQ5,LQ nach Preis ab 1.53 EUR bis 5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TPH1100CQ5,LQ | Toshiba Semiconductor and Storage |
 Description: 150V UMOS10-H SOP ADVANCEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V Power Dissipation (Max): 3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 800µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH1100CQ5,LQ | Toshiba Semiconductor and Storage |
Description: 150V UMOS10-H SOP ADVANCE Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: 8-SOP Advance (5x5.75) Vgs(th) (Max) @ Id: 4.5V @ 800µA Power Dissipation (Max): 3W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPH1100CQ5,LQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: 150V UMOS10-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V
Description: 150V UMOS10-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.53 EUR |
| TPH1100CQ5,LQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: 150V UMOS10-H SOP ADVANCE
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 150V UMOS10-H SOP ADVANCE
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5 EUR |
| 10+ | 3.25 EUR |
| 25+ | 2.79 EUR |
| 100+ | 2.28 EUR |
| 250+ | 2.03 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.75 EUR |
| 2500+ | 1.61 EUR |