TPH1110FNH,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.16 EUR |
| 10+ | 2.67 EUR |
| 50+ | 2.01 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.44 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6 Stücke
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Technische Details TPH1110FNH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 10A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 10V, Power Dissipation (Max): 1.6W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Weitere Produktangebote TPH1110FNH,L1Q
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
TPH1110FNH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 250V 10A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 10V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
TPH1110FNH,L1Q | Toshiba |
MOSFETs X35PBF Power MOSFET Transistr95ohm250V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TPH1110FNH,L1Q | Toshiba |
Trans MOSFET N-CH Si 250V 15A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TPH1110FNH,L1Q |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 250V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TPH1110FNH,L1Q |
![]() |
Hersteller: Toshiba
MOSFETs X35PBF Power MOSFET Transistr95ohm250V
MOSFETs X35PBF Power MOSFET Transistr95ohm250V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH1110FNH,L1Q |
![]() |
Hersteller: Toshiba
Trans MOSFET N-CH Si 250V 15A 8-Pin SOP Advance T/R
Trans MOSFET N-CH Si 250V 15A 8-Pin SOP Advance T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH


