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TPH14006NH,L1Q

TPH14006NH,L1Q Toshiba

TPH14006NH_datasheet_en_20140107-1140075.pdf Hersteller: Toshiba
MOSFET U-MOSVIII-H 60V 34A 16nC MOSFET
auf Bestellung 3781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.78 EUR
10+1.47 EUR
100+1.14 EUR
500+0.97 EUR
1000+0.74 EUR
5000+0.71 EUR
Mindestbestellmenge: 2
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Technische Details TPH14006NH,L1Q Toshiba

Description: MOSFET N CH 60V 14A 8-SOP ADV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V, Power Dissipation (Max): 1.6W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V.

Weitere Produktangebote TPH14006NH,L1Q nach Preis ab 0.77 EUR bis 2.73 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TPH14006NH,L1Q TPH14006NH,L1Q Hersteller : Toshiba Semiconductor and Storage TPH14006NH_datasheet_en_20140107.pdf?did=13356&prodName=TPH14006NH Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 4380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.73 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.8 EUR
2000+0.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TPH14006NH,L1Q TPH14006NH,L1Q Hersteller : Toshiba 2955docget.jsplangenpidtph14006nhtypedatasheet.jsplangenpidtph14006nh.pdf Trans MOSFET N-CH Si 60V 34A 8-Pin SOP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH14006NH,L1Q TPH14006NH,L1Q Hersteller : Toshiba Semiconductor and Storage TPH14006NH_datasheet_en_20140107.pdf?did=13356&prodName=TPH14006NH Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH