TPH1R104PB,L1XHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details TPH1R104PB,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8SOP, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 3V @ 500µA, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPH1R104PB,L1XHQ nach Preis ab 1.37 EUR bis 4.28 EUR
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TPH1R104PB,L1XHQ | Toshiba |
MOSFETs 132W 1MHz Automotive; AEC-Q101 |
auf Bestellung 5408 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1R104PB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 120A 8SOP Qualification: AEC-Q101 Grade: Automotive Current - Continuous Drain (Id) @ 25°C: 120A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V |
auf Bestellung 5098 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH1R104PB,L1XHQ |
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Hersteller: Toshiba
MOSFETs 132W 1MHz Automotive; AEC-Q101
MOSFETs 132W 1MHz Automotive; AEC-Q101
auf Bestellung 5408 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.82 EUR |
| 10+ | 2.68 EUR |
| 25+ | 2.62 EUR |
| 100+ | 1.92 EUR |
| 250+ | 1.9 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.37 EUR |
| TPH1R104PB,L1XHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Description: MOSFET N-CH 40V 120A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
auf Bestellung 5098 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.28 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.56 EUR |