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TPH1R104PB,L1XHQ

TPH1R104PB,L1XHQ Toshiba Semiconductor and Storage

TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.42 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH1R104PB,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 120A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote TPH1R104PB,L1XHQ nach Preis ab 1.37 EUR bis 4.61 EUR

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TPH1R104PB,L1XHQ TPH1R104PB,L1XHQ Hersteller : Toshiba TPH1R104PB_datasheet_en_20200624-1840182.pdf MOSFETs 132W 1MHz Automotive; AEC-Q101
auf Bestellung 5408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.82 EUR
10+2.68 EUR
25+2.62 EUR
100+1.92 EUR
250+1.9 EUR
500+1.56 EUR
1000+1.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R104PB,L1XHQ TPH1R104PB,L1XHQ Hersteller : Toshiba Semiconductor and Storage TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB Description: MOSFET N-CH 40V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
10+2.98 EUR
100+2.06 EUR
500+1.66 EUR
1000+1.53 EUR
2000+1.42 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH