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Technische Details TPH1R204PL Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 246A; 132W; SOP8A, Mounting: SMD, Drain-source voltage: 40V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOP8A, On-state resistance: 1.24Ω, Power dissipation: 132W, Gate charge: 74nC, Polarisation: unipolar, Drain current: 246A, Kind of channel: enhancement.
Weitere Produktangebote TPH1R204PL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TPH1R204PL,L1Q(M | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 246A; 132W; SOP8A Mounting: SMD Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8A On-state resistance: 1.24Ω Power dissipation: 132W Gate charge: 74nC Polarisation: unipolar Drain current: 246A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TPH1R204PL,L1Q(M |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 246A; 132W; SOP8A
Mounting: SMD
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8A
On-state resistance: 1.24Ω
Power dissipation: 132W
Gate charge: 74nC
Polarisation: unipolar
Drain current: 246A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 246A; 132W; SOP8A
Mounting: SMD
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8A
On-state resistance: 1.24Ω
Power dissipation: 132W
Gate charge: 74nC
Polarisation: unipolar
Drain current: 246A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH