TPH1R204PL1,LQ

TPH1R204PL1,LQ Toshiba Semiconductor and Storage


TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1 Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.93 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH1R204PL1,LQ Toshiba Semiconductor and Storage

Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V.

Weitere Produktangebote TPH1R204PL1,LQ nach Preis ab 1.04 EUR bis 3.13 EUR

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TPH1R204PL1,LQ TPH1R204PL1,LQ Hersteller : Toshiba Semiconductor and Storage TPH1R204PL1_datasheet_en_20200626.pdf?did=69120&prodName=TPH1R204PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 12899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+2.16 EUR
100+1.46 EUR
500+1.18 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R204PL1,LQ TPH1R204PL1,LQ Hersteller : Toshiba TPH1R204PL1_datasheet_en_20200626-2449268.pdf MOSFETs UMOS9 SOP-ADV(N) RDSon=1.24mohm(max)
auf Bestellung 4593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.13 EUR
10+2.13 EUR
100+1.46 EUR
500+1.18 EUR
1000+1.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R204PL1,LQ транзистор
Produktcode: 210299
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TPH1R204PL1,LQ TPH1R204PL1,LQ Hersteller : Toshiba tph1r204pl1_datasheet_en_20200626.pdf Trans MOSFET N-CH Si 40V 270A 8-Pin SOP Advance(N) T/R
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TPH1R204PL1,LQ TPH1R204PL1,LQ Hersteller : Toshiba tph1r204pl1_datasheet_en_20200626.pdf Trans MOSFET N-CH Si 40V 270A 8-Pin SOP Advance(N) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH