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TPH1R306PL1,LQ

TPH1R306PL1,LQ Toshiba Semiconductor and Storage

docget.jsp?did=69026&prodName=TPH1R306PL1 Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.64 EUR
Mindestbestellmenge: 5000
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Technische Details TPH1R306PL1,LQ Toshiba Semiconductor and Storage

Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 210W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V.

Weitere Produktangebote TPH1R306PL1,LQ nach Preis ab 1.66 EUR bis 3.82 EUR

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TPH1R306PL1,LQ TPH1R306PL1,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=69026&prodName=TPH1R306PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 7397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.78 EUR
10+ 3.14 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.79 EUR
2000+ 1.71 EUR
Mindestbestellmenge: 5
TPH1R306PL1,LQ TPH1R306PL1,LQ Hersteller : Toshiba TPH1R306PL1_datasheet_en_20200626-2449286.pdf MOSFET UMOS9 SOP-ADV(N) RDSon=1.34mohm(max)
auf Bestellung 46593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.82 EUR
10+ 3.17 EUR
100+ 2.52 EUR
250+ 2.46 EUR
500+ 2.13 EUR
1000+ 1.72 EUR
5000+ 1.66 EUR
TPH1R306PL1,LQ TPH1R306PL1,LQ Hersteller : Toshiba tph1r306pl1_datasheet_en_20200626.pdf Trans MOSFET N-CH Si 60V 280A 8-Pin SOP Advance(N) T/R
Produkt ist nicht verfügbar
TPH1R306PL1,LQ TPH1R306PL1,LQ Hersteller : Toshiba tph1r306pl1_datasheet_en_20200626.pdf Trans MOSFET N-CH Si 60V 280A 8-Pin SOP Advance(N) T/R
Produkt ist nicht verfügbar