| Anzahl | Preis |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.09 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 1.02 EUR |
| 2500+ | 0.94 EUR |
| 5000+ | 0.88 EUR |
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Technische Details TPH1R403NL,L1Q Toshiba
Description: MOSFET N-CH 30V 60A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.3V @ 500µA, Power Dissipation (Max): 1.6W (Ta), 64W (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPH1R403NL,L1Q nach Preis ab 1 EUR bis 3.41 EUR
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TPH1R403NL,L1Q | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 30V 60A 8SOPRds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 500µA Power Dissipation (Max): 1.6W (Ta), 64W (Tc) |
auf Bestellung 3707 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH1R403NL,L1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 60A 8SOP
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 64W (Tc)
Description: MOSFET N-CH 30V 60A 8SOP
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 64W (Tc)
auf Bestellung 3707 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.41 EUR |
| 10+ | 2.19 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.08 EUR |
| 2000+ | 1 EUR |