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TPH1R405PL,L1Q

TPH1R405PL,L1Q Toshiba Semiconductor and Storage

TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
auf Bestellung 4136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.22 EUR
100+1.5 EUR
500+1.19 EUR
1000+1.1 EUR
2000+1.01 EUR
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Technische Details TPH1R405PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 45V 120A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V.

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TPH1R405PL,L1Q TPH1R405PL,L1Q Hersteller : Toshiba tph1r405pl_datasheet_en_20191030.pdf Trans MOSFET N-CH Si 45V 232A 8-Pin SOP Advance T/R
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TPH1R405PL,L1Q TPH1R405PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL Description: MOSFET N-CH 45V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R405PL,L1Q TPH1R405PL,L1Q Hersteller : Toshiba TPH1R405PL_datasheet_en_20191030-1916447.pdf MOSFETs POWER MOSFET TRANSISTOR
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Im Einkaufswagen  Stück im Wert von  UAH