TPH2010FNH,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8SOP
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 200µA
Produktrezensionen
Produktbewertung abgeben
Technische Details TPH2010FNH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8SOP, Power Dissipation (Max): 1.6W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 4V @ 200µA.
Weitere Produktangebote TPH2010FNH,L1Q nach Preis ab 1.01 EUR bis 3.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TPH2010FNH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 250V 5.6A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V |
auf Bestellung 8823 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
TPH2010FNH,L1Q | Toshiba |
MOSFETs UMOSVIII 250V 205m (VGS=10V) SOP-ADV |
auf Bestellung 4997 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPH2010FNH,L1Q |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 8823 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.43 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.09 EUR |
| 2000+ | 1.01 EUR |
| TPH2010FNH,L1Q |
![]() |
Hersteller: Toshiba
MOSFETs UMOSVIII 250V 205m (VGS=10V) SOP-ADV
MOSFETs UMOSVIII 250V 205m (VGS=10V) SOP-ADV
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.5 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.08 EUR |
| 2500+ | 1.07 EUR |
| 5000+ | 1.02 EUR |


