auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.49 EUR |
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Technische Details TPH2R003PL,LQ Toshiba
Description: MOSFET N-CH 30V 100A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Power Dissipation (Max): 830mW (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V.
Weitere Produktangebote TPH2R003PL,LQ nach Preis ab 0.49 EUR bis 2.2 EUR
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TPH2R003PL,LQ | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 30V 100A 8-Pin SOP Advance T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TPH2R003PL,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 830mW (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R003PL,LQ | Hersteller : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR |
auf Bestellung 5179 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R003PL,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 830mW (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V |
auf Bestellung 10657 Stücke: Lieferzeit 10-14 Tag (e) |
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