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TPH2R003PL,LQ

TPH2R003PL,LQ Toshiba


13169docget.jspdid54498prodnametph2r003pl.jspdid54498prodnametph2r003p.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 30V 100A 8-Pin SOP Advance T/R
auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.49 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH2R003PL,LQ Toshiba

Description: MOSFET N-CH 30V 100A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Power Dissipation (Max): 830mW (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V.

Weitere Produktangebote TPH2R003PL,LQ nach Preis ab 0.49 EUR bis 2.20 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TPH2R003PL,LQ TPH2R003PL,LQ Hersteller : Toshiba 13169docget.jspdid54498prodnametph2r003pl.jspdid54498prodnametph2r003p.pdf Trans MOSFET N-CH Si 30V 100A 8-Pin SOP Advance T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.49 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R003PL,LQ TPH2R003PL,LQ Hersteller : Toshiba Semiconductor and Storage TPH2R003PL_datasheet_en_20160906.pdf?did=54498&prodName=TPH2R003PL Description: MOSFET N-CH 30V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.70 EUR
6000+0.69 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R003PL,LQ TPH2R003PL,LQ Hersteller : Toshiba TPH2R003PL_datasheet_en_20160906-1916448.pdf MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 5209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.09 EUR
10+1.41 EUR
100+0.95 EUR
500+0.76 EUR
1000+0.71 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R003PL,LQ TPH2R003PL,LQ Hersteller : Toshiba Semiconductor and Storage TPH2R003PL_datasheet_en_20160906.pdf?did=54498&prodName=TPH2R003PL Description: MOSFET N-CH 30V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
auf Bestellung 10657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.20 EUR
12+1.53 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH