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Technische Details TPH2R003PL,LQ Toshiba
Description: MOSFET N-CH 30V 100A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.1V @ 500µA, Power Dissipation (Max): 830mW (Ta), 116W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPH2R003PL,LQ nach Preis ab 0.58 EUR bis 4.52 EUR
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TPH2R003PL,LQ | Toshiba |
 Trans MOSFET N-CH Si 30V 100A 8-Pin SOP Advance T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TPH2R003PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.1V @ 500µA Power Dissipation (Max): 830mW (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R003PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.1V @ 500µA Power Dissipation (Max): 830mW (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 10602 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R003PL,LQ | Toshiba |
MOSFETs POWER MOSFET TRANSISTOR |
auf Bestellung 5152 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH2R003PL,LQ |
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Hersteller: Toshiba
Trans MOSFET N-CH Si 30V 100A 8-Pin SOP Advance T/R
Trans MOSFET N-CH Si 30V 100A 8-Pin SOP Advance T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.58 EUR |
| TPH2R003PL,LQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.79 EUR |
| 6000+ | 0.74 EUR |
| TPH2R003PL,LQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 10602 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 11+ | 1.92 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.93 EUR |
| TPH2R003PL,LQ |
|
Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR
MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 5152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 2.92 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.45 EUR |
| 3000+ | 1.34 EUR |