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TPH2R104PL,LQ

TPH2R104PL,LQ Toshiba Semiconductor and Storage

TPH2R104PL_datasheet_en_20160617.pdf?did=53315&prodName=TPH2R104PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.9 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH2R104PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 100A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V, Power Dissipation (Max): 830mW (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V.

Weitere Produktangebote TPH2R104PL,LQ nach Preis ab 0.91 EUR bis 3.26 EUR

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TPH2R104PL,LQ TPH2R104PL,LQ Hersteller : Toshiba TPH2R104PL_datasheet_en_20160617-1916446.pdf MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 50113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.85 EUR
10+1.52 EUR
100+1.06 EUR
500+0.91 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R104PL,LQ TPH2R104PL,LQ Hersteller : Toshiba Semiconductor and Storage TPH2R104PL_datasheet_en_20160617.pdf?did=53315&prodName=TPH2R104PL Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 11371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
10+2.08 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.02 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R104PL,LQ TPH2R104PL,LQ Hersteller : Toshiba 4664docget.jspdid53315prodnametph2r104pl.jspdid53315prodnametph2r104p.pdf Trans MOSFET N-CH Si 40V 180A 8-Pin SOP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH