Weitere Produktangebote TPH2R306NH,L1Q nach Preis ab 1.13 EUR bis 3.8 EUR
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TPH2R306NH,L1Q | Hersteller : Toshiba |
 MOSFETs U-MOSVIII-H 60V 130A 72nC MOSFET |
auf Bestellung 6778 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R306NH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V |
auf Bestellung 5003 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R306NH,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 130A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |
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TPH2R306NH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V |
Produkt ist nicht verfügbar |