Produkte > TOSHIBA > TPH2R306NH,L1Q
TPH2R306NH,L1Q

TPH2R306NH,L1Q Toshiba

TPH2R306NH_datasheet_en_20191024-1140128.pdf Hersteller: Toshiba
MOSFET U-MOSVIII-H 60V 130A 72nC MOSFET
auf Bestellung 8791 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.11 EUR
16+ 3.43 EUR
100+ 2.73 EUR
500+ 2.28 EUR
1000+ 1.86 EUR
10000+ 1.8 EUR
Mindestbestellmenge: 13
Produktrezensionen
Produktbewertung abgeben

Technische Details TPH2R306NH,L1Q Toshiba

Description: MOSFET N-CH 60V 60A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V, Power Dissipation (Max): 1.6W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V.

Weitere Produktangebote TPH2R306NH,L1Q nach Preis ab 1.89 EUR bis 4.19 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TPH2R306NH,L1Q TPH2R306NH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13732&prodName=TPH2R306NH Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 4854 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.19 EUR
10+ 3.49 EUR
100+ 2.78 EUR
500+ 2.35 EUR
1000+ 1.99 EUR
2000+ 1.89 EUR
Mindestbestellmenge: 7
TPH2R306NH,L1Q
Produktcode: 149945 		docget.jsp?did=13732&prodName=TPH2R306NH Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
TPH2R306NH,L1Q TPH2R306NH,L1Q Hersteller : Toshiba tph2r306nh_datasheet_en_20191024.pdf Trans MOSFET N-CH Si 60V 130A 8-Pin SOP Advance T/R
Produkt ist nicht verfügbar
TPH2R306NH,L1Q TPH2R306NH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13732&prodName=TPH2R306NH Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Produkt ist nicht verfügbar