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TPH2R506PL,L1Q

TPH2R506PL,L1Q Toshiba Semiconductor and Storage

TPH2R506PL_datasheet_en_20191017.pdf?did=55522&prodName=TPH2R506PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.96 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH2R506PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 100A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V.

Weitere Produktangebote TPH2R506PL,L1Q nach Preis ab 1.02 EUR bis 3.24 EUR

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TPH2R506PL,L1Q TPH2R506PL,L1Q Hersteller : Toshiba TPH2R506PL_datasheet_en_20191017-1075470.pdf MOSFETs N-Ch 60V 4180pF 60nC 160A 132W
auf Bestellung 18709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.22 EUR
10+2.13 EUR
100+1.46 EUR
500+1.18 EUR
1000+1.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R506PL,L1Q TPH2R506PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPH2R506PL_datasheet_en_20191017.pdf?did=55522&prodName=TPH2R506PL Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
auf Bestellung 58708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+2.15 EUR
100+1.48 EUR
500+1.22 EUR
1000+1.17 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R506PL,L1Q TPH2R506PL,L1Q Hersteller : Toshiba tph2r506pl_datasheet_en_20191017.pdf Trans MOSFET N-CH Si 60V 160A 8-Pin SOP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH