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TPH2R70AR5,LQ

TPH2R70AR5,LQ Toshiba Semiconductor and Storage

TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5 Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.04 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH2R70AR5,LQ Toshiba Semiconductor and Storage

Description: N-CH MOSFET, 100 V, 0.0027 OHM@1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 210W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V.

Weitere Produktangebote TPH2R70AR5,LQ nach Preis ab 1.27 EUR bis 3.94 EUR

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TPH2R70AR5,LQ TPH2R70AR5,LQ Hersteller : Toshiba Semiconductor and Storage TPH2R70AR5_datasheet_en_20250425.pdf?did=162761&prodName=TPH2R70AR5 Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 13831 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.54 EUR
100+1.73 EUR
500+1.39 EUR
1000+1.28 EUR
2000+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH