TPH3300CNH,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 150V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.74 EUR |
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Technische Details TPH3300CNH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 18A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V, Power Dissipation (Max): 1.6W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V.
Weitere Produktangebote TPH3300CNH,L1Q nach Preis ab 0.53 EUR bis 2.78 EUR
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TPH3300CNH,L1Q | Hersteller : Toshiba |
TPH3300CNH,L1Q Toshiba MOSFETs Transistor N-CH Si 150V 29A 8-Pin SOP Advance T/R Si - Arrow.com |
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TPH3300CNH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 150V 18A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V |
auf Bestellung 11863 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH3300CNH,L1Q | Hersteller : Toshiba |
TPH3300CNH,L1Q Toshiba MOSFETs Transistor N-CH Si 150V 29A 8-Pin SOP Advance T/R Si - Arrow.com |
Produkt ist nicht verfügbar |
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Trans MOSFET N-CH Si 150V 29A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |