TPH3R008QM,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.96 EUR |
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Technische Details TPH3R008QM,LQ Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 900µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V.
Weitere Produktangebote TPH3R008QM,LQ nach Preis ab 1.02 EUR bis 2.53 EUR
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TPH3R008QM,LQ | Hersteller : Toshiba |
 MOSFETs 80V UMOS9-H SOP-Advance(N) 3mohm |
auf Bestellung 4766 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH3R008QM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 3MOHM Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V |
auf Bestellung 12263 Stücke: Lieferzeit 10-14 Tag (e) |
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