TPH3R10AQM,LQ Toshiba Semiconductor and Storage

Description: 100V U-MOS X-H SOP-ADVANCE(N) 3., Supplier Device Package: 8-SOP Advance (5x5.75), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Power Dissipation (Max): 210W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V.