| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.65 EUR |
| 10+ | 3 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.5 EUR |
| 2500+ | 1.48 EUR |
| 5000+ | 1.4 EUR |
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Technische Details TPH3R10AQM,LQ Toshiba
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3., Supplier Device Package: 8-SOP Advance (5x5.75), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Power Dissipation (Max): 210W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V.
Weitere Produktangebote TPH3R10AQM,LQ nach Preis ab 1.68 EUR bis 5.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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TPH3R10AQM,LQ | Toshiba Semiconductor and Storage |
 Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.Supplier Device Package: 8-SOP Advance (5x5.75) Vgs(th) (Max) @ Id: 3.5V @ 500µA Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
auf Bestellung 1165 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH3R10AQM,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
auf Bestellung 1165 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.09 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.68 EUR |