auf Bestellung 6992 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
14+ | 3.93 EUR |
16+ | 3.28 EUR |
100+ | 2.6 EUR |
250+ | 2.39 EUR |
500+ | 2.17 EUR |
1000+ | 1.93 EUR |
5000+ | 1.71 EUR |
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Technische Details TPH3R10AQM,LQ Toshiba
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3., Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V.
Weitere Produktangebote TPH3R10AQM,LQ nach Preis ab 1.48 EUR bis 2.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TPH3R10AQM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3. Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V |
auf Bestellung 7073 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH3R10AQM,LQ | Hersteller : Toshiba | TPH3R10AQM,LQ |
Produkt ist nicht verfügbar |
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TPH3R10AQM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V |
Produkt ist nicht verfügbar |