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TPH3R10AQM,LQ

TPH3R10AQM,LQ Toshiba Semiconductor and Storage

TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM Hersteller: Toshiba Semiconductor and Storage
Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
auf Bestellung 3639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.7 EUR
10+2.38 EUR
100+1.63 EUR
500+1.31 EUR
1000+1.29 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH3R10AQM,LQ Toshiba Semiconductor and Storage

Description: 100V U-MOS X-H SOP-ADVANCE(N) 3., Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V.

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TPH3R10AQM,LQ TPH3R10AQM,LQ Hersteller : Toshiba TPH3R10AQM_datasheet_en_20210817-3175374.pdf MOSFETs 100V U-MOS X-H SOP-Advance(N) 3.1mohm
auf Bestellung 4566 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.82 EUR
10+2.46 EUR
100+1.68 EUR
500+1.42 EUR
1000+1.34 EUR
5000+1.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R10AQM,LQ Hersteller : Toshiba tph3r10aqm_datasheet_en_20210817.pdf Silicon N-Channel MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R10AQM,LQ TPH3R10AQM,LQ Hersteller : Toshiba Semiconductor and Storage TPH3R10AQM_datasheet_en_20210817.pdf?did=140441&prodName=TPH3R10AQM Description: 100V U-MOS X-H SOP-ADVANCE(N) 3.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH