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TPH3R203NL,L1Q

TPH3R203NL,L1Q Toshiba

TPH3R203NL_datasheet_en_20191030-1916209.pdf Hersteller: Toshiba
MOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V
auf Bestellung 2779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.95 EUR
10+1.57 EUR
25+1.45 EUR
100+1.1 EUR
500+0.89 EUR
1000+0.79 EUR
Mindestbestellmenge: 2
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Technische Details TPH3R203NL,L1Q Toshiba

Description: MOSFET N-CH 30V 47A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 23.5A, 10V, Power Dissipation (Max): 1.6W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V.

Weitere Produktangebote TPH3R203NL,L1Q nach Preis ab 0.83 EUR bis 2.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TPH3R203NL,L1Q TPH3R203NL,L1Q Hersteller : Toshiba Semiconductor and Storage TPH3R203NL_datasheet_en_20191030.pdf?did=14426&prodName=TPH3R203NL Description: MOSFET N-CH 30V 47A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 23.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+1.87 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.91 EUR
2000+0.83 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R203NL,L1Q Hersteller : Toshiba TPH3R203NL_datasheet_en_20191030.pdf?did=14426&prodName=TPH3R203NL MOSFETs Silicon N-channel MOS (U-MOS 4-H) 30V 47A TPH3R203NL,L1Q TOSHIBA TTPH3r203nl
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+1.21 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R203NL,L1Q TPH3R203NL,L1Q Hersteller : Toshiba Semiconductor and Storage TPH3R203NL_datasheet_en_20191030.pdf?did=14426&prodName=TPH3R203NL Description: MOSFET N-CH 30V 47A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 23.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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