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TPH3R203NL,L1Q

TPH3R203NL,L1Q Toshiba Semiconductor and Storage

TPH3R203NL_datasheet_en_20191030.pdf?did=14426&prodName=TPH3R203NL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 47A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 23.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.76 EUR
Mindestbestellmenge: 5000
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Technische Details TPH3R203NL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 47A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 23.5A, 10V, Power Dissipation (Max): 1.6W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V.

Weitere Produktangebote TPH3R203NL,L1Q nach Preis ab 0.8 EUR bis 2.94 EUR

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TPH3R203NL,L1Q TPH3R203NL,L1Q Hersteller : Toshiba Semiconductor and Storage TPH3R203NL_datasheet_en_20191030.pdf?did=14426&prodName=TPH3R203NL Description: MOSFET N-CH 30V 47A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 23.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
auf Bestellung 8479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.94 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.04 EUR
1000+ 0.85 EUR
2000+ 0.8 EUR
Mindestbestellmenge: 10
TPH3R203NL,L1Q TPH3R203NL,L1Q Hersteller : Toshiba TPH3R203NL_datasheet_en_20191030-1916209.pdf MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V
auf Bestellung 2891 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+2.94 EUR
22+ 2.39 EUR
100+ 1.85 EUR
500+ 1.57 EUR
1000+ 1.21 EUR
5000+ 1.15 EUR
Mindestbestellmenge: 18
TPH3R203NL,L1Q Hersteller : Toshiba TPH3R203NL_datasheet_en_20191030.pdf?did=14426&prodName=TPH3R203NL MOSFETs Silicon N-channel MOS (U-MOS 4-H) 30V 47A TPH3R203NL,L1Q TOSHIBA TTPH3r203nl
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+1.37 EUR
Mindestbestellmenge: 30