| Anzahl | Privatkunde |
|---|---|
| 102+ | 1.75 EUR |
| 107+ | 1.65 EUR |
| 150+ | 1.14 EUR |
Artikel auf Bestellung
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Lieferzeit:
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Mindestmenge:
102 Stücke
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Technische Details TPH3R70APL1,LQ Toshiba
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V.
Weitere Produktangebote TPH3R70APL1,LQ nach Preis ab 1.46 EUR bis 4.96 EUR
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TPH3R70APL1,LQ | Toshiba |
 Trans MOSFET N-CH Si 100V 170A 8-Pin SOP Advance(N) |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
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TPH3R70APL1,LQ | Toshiba |
MOSFETs 100V U-MOS IX-H SOP-Advance(N) 3.7mohm |
auf Bestellung 1928 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH3R70APL1,LQ | Toshiba Semiconductor and Storage |
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
auf Bestellung 4700 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPH3R70APL1,LQ |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 100V 170A 8-Pin SOP Advance(N)
Trans MOSFET N-CH Si 100V 170A 8-Pin SOP Advance(N)
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 3.97 EUR |
| 70+ | 2.46 EUR |
| 103+ | 1.61 EUR |
| TPH3R70APL1,LQ |
|
Hersteller: Toshiba
MOSFETs 100V U-MOS IX-H SOP-Advance(N) 3.7mohm
MOSFETs 100V U-MOS IX-H SOP-Advance(N) 3.7mohm
auf Bestellung 1928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.82 EUR |
| 10+ | 2.37 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.63 EUR |
| 2500+ | 1.55 EUR |
| 5000+ | 1.46 EUR |
| TPH3R70APL1,LQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 4700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.96 EUR |
| 10+ | 3.2 EUR |
| 50+ | 2.43 EUR |
| 100+ | 2.19 EUR |
| 500+ | 1.75 EUR |