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TPH4R008NH,L1Q

TPH4R008NH,L1Q Toshiba Semiconductor and Storage

TPH4R008NH_datasheet_en_20191017.pdf?did=13444&prodName=TPH4R008NH Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.89 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH4R008NH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 80V 60A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Power Dissipation (Max): 1.6W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V.

Weitere Produktangebote TPH4R008NH,L1Q nach Preis ab 1.97 EUR bis 4.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TPH4R008NH,L1Q TPH4R008NH,L1Q Hersteller : Toshiba 4DBED937B91A0124316B52A46C54E3FD6DDA549715E2E081E40F32E8E966CB4E.pdf MOSFETs U-MOSVIII-H 80V 100A 59nC MOSFET
auf Bestellung 2706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.03 EUR
10+3.26 EUR
100+2.38 EUR
500+2.32 EUR
1000+2.16 EUR
2500+2.04 EUR
5000+1.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R008NH,L1Q TPH4R008NH,L1Q Hersteller : Toshiba Semiconductor and Storage TPH4R008NH_datasheet_en_20191017.pdf?did=13444&prodName=TPH4R008NH Description: MOSFET N-CH 80V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 11416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
10+3.31 EUR
100+2.42 EUR
500+2.31 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R008NH,L1Q TPH4R008NH,L1Q Hersteller : Toshiba tph4r008nh_datasheet_en_20191017.pdf Trans MOSFET N-CH Si 80V 100A 8-Pin SOP Advance T/R
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Im Einkaufswagen  Stück im Wert von  UAH