auf Bestellung 4473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.24 EUR |
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Technische Details TPH4R008NH1,LQ Toshiba
Description: 80V U-MOS VIII-H SOP-ADVANCE(N), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V.
Weitere Produktangebote TPH4R008NH1,LQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TPH4R008NH1,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 80V U-MOS VIII-H SOP-ADVANCE(N) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V |
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