Produkte > TOSHIBA > TPH4R008NH1,LQ
TPH4R008NH1,LQ

TPH4R008NH1,LQ Toshiba


TPH4R008NH1_datasheet_en_20201109-3513153.pdf Hersteller: Toshiba
MOSFETs SOPNC H AN80 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.34 EUR
10+2.15 EUR
25+1.83 EUR
100+1.46 EUR
250+1.33 EUR
500+1.17 EUR
1000+1.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TPH4R008NH1,LQ Toshiba

Description: 80V U-MOS VIII-H SOP-ADVANCE(N), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V.

Weitere Produktangebote TPH4R008NH1,LQ

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TPH4R008NH1,LQ TPH4R008NH1,LQ Hersteller : Toshiba Semiconductor and Storage Description: 80V U-MOS VIII-H SOP-ADVANCE(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 146A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH