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TPH4R008QM,LQ

TPH4R008QM,LQ Toshiba Semiconductor and Storage

docget.jsp?did=68914&prodName=TPH4R008QM Hersteller: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.73 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH4R008QM,LQ Toshiba Semiconductor and Storage

Description: POWER MOSFET TRANSISTOR SOP8-ADV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 600µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V.

Weitere Produktangebote TPH4R008QM,LQ nach Preis ab 0.56 EUR bis 2.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TPH4R008QM,LQ TPH4R008QM,LQ Hersteller : Toshiba tph4r008qm_datasheet_en_20200221.pdf Trans MOSFET N-CH Si 80V 86A 8-Pin SOP Advance(N) T/R
auf Bestellung 3431 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
184+0.78 EUR
187+0.74 EUR
190+0.7 EUR
250+0.66 EUR
500+0.63 EUR
1000+0.59 EUR
3000+0.56 EUR
Mindestbestellmenge: 184
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R008QM,LQ TPH4R008QM,LQ Hersteller : Toshiba tph4r008qm_datasheet_en_20200221.pdf Trans MOSFET N-CH Si 80V 86A 8-Pin SOP Advance(N) T/R
auf Bestellung 3431 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
181+0.79 EUR
184+0.75 EUR
187+0.71 EUR
190+0.67 EUR
250+0.64 EUR
500+0.6 EUR
1000+0.56 EUR
Mindestbestellmenge: 181
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R008QM,LQ TPH4R008QM,LQ Hersteller : Toshiba BFFA214E97EB814EEB8244F93D6854B3ABB42B993667B3F757CD45398A82E338.pdf MOSFETs SOP8 N-CH 80V 86A
auf Bestellung 5886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.47 EUR
10+1.17 EUR
100+1 EUR
500+0.95 EUR
1000+0.88 EUR
2500+0.87 EUR
5000+0.76 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R008QM,LQ TPH4R008QM,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=68914&prodName=TPH4R008QM Description: POWER MOSFET TRANSISTOR SOP8-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
auf Bestellung 5001 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.82 EUR
100+1.23 EUR
500+0.97 EUR
1000+0.9 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R008QM,LQ TPH4R008QM,LQ Hersteller : Toshiba tph4r008qm_datasheet_en_20200221.pdf Trans MOSFET N-CH Si 80V 86A 8-Pin SOP Advance(N) T/R
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Im Einkaufswagen  Stück im Wert von  UAH