Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TPH4R10ANL,L1Q
TPH4R10ANL,L1Q

TPH4R10ANL,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=55592&prodName=TPH4R10ANL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A/70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 4631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.38 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.18 EUR
2000+1.12 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TPH4R10ANL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 92A/70A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V, Power Dissipation (Max): 2.5W (Ta), 67W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V.

Weitere Produktangebote TPH4R10ANL,L1Q nach Preis ab 1.16 EUR bis 3.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TPH4R10ANL,L1Q TPH4R10ANL,L1Q Hersteller : Toshiba TPH4R10ANL_datasheet_en_20191018-1114606.pdf MOSFETs U-MOSVIII-H 100V 92A 75nC MOSFET
auf Bestellung 12375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.85 EUR
10+2.50 EUR
100+1.71 EUR
500+1.36 EUR
1000+1.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R10ANL,L1Q TPH4R10ANL,L1Q Hersteller : Toshiba tph4r10anl_datasheet_en_20191018.pdf Trans MOSFET N-CH Si 100V 92A 8-Pin SOP Advance
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R10ANL,L1Q TPH4R10ANL,L1Q Hersteller : Toshiba tph4r10anl_datasheet_en_20191018.pdf Trans MOSFET N-CH Si 100V 92A 8-Pin SOP Advance
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R10ANL,L1Q TPH4R10ANL,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=55592&prodName=TPH4R10ANL Description: MOSFET N-CH 100V 92A/70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH