TPH4R10ANL,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details TPH4R10ANL,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A/70A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2.5W (Ta), 67W (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPH4R10ANL,L1Q nach Preis ab 1.16 EUR bis 3.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TPH4R10ANL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 92A/70A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2.5W (Ta), 67W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 7196 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
TPH4R10ANL,L1Q | Toshiba |
MOSFETs U-MOSVIII-H 100V 92A 75nC MOSFET |
auf Bestellung 11771 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPH4R10ANL,L1Q |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 7196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.63 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.24 EUR |
| TPH4R10ANL,L1Q |
![]() |
Hersteller: Toshiba
MOSFETs U-MOSVIII-H 100V 92A 75nC MOSFET
MOSFETs U-MOSVIII-H 100V 92A 75nC MOSFET
auf Bestellung 11771 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.85 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.24 EUR |
| 2500+ | 1.22 EUR |
| 5000+ | 1.16 EUR |


