auf Bestellung 3906 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.41 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.22 EUR |
| 2500+ | 1.19 EUR |
| 5000+ | 1.05 EUR |
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Technische Details TPH4R10ANL,L1Q Toshiba
Description: MOSFET N-CH 100V 92A/70A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V, Power Dissipation (Max): 2.5W (Ta), 67W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V.
Weitere Produktangebote TPH4R10ANL,L1Q nach Preis ab 1.24 EUR bis 3.63 EUR
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TPH4R10ANL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 100V 92A/70A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Power Dissipation (Max): 2.5W (Ta), 67W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
auf Bestellung 2949 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH4R10ANL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 100V 92A 8-Pin SOP Advance |
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TPH4R10ANL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 100V 92A 8-Pin SOP Advance |
Produkt ist nicht verfügbar |
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TPH4R10ANL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 92A/70A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Power Dissipation (Max): 2.5W (Ta), 67W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
Produkt ist nicht verfügbar |