TPH4R50ANH1,LQ

TPH4R50ANH1,LQ Toshiba Semiconductor and Storage


datasheet_en_20191017.pdf?did=69024 Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.90 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH4R50ANH1,LQ Toshiba Semiconductor and Storage

Description: MOSFET 100V 4.5MOHM SOP-ADV(N), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 92A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V.

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TPH4R50ANH1,LQ TPH4R50ANH1,LQ Hersteller : Toshiba Semiconductor and Storage datasheet_en_20191017.pdf?did=69024 Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
auf Bestellung 5724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+2.07 EUR
100+1.42 EUR
500+1.13 EUR
1000+1.01 EUR
2000+0.96 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R50ANH1,LQ TPH4R50ANH1,LQ Hersteller : Toshiba TOSHIBA_TPH4R50ANH1_datasheet_en_20191017-2577078.pdf MOSFETs UMOS8 SOP-ADV(N) 100V 4.5mohm
auf Bestellung 10288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.03 EUR
10+2.01 EUR
100+1.37 EUR
500+1.11 EUR
1000+0.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R50ANH1,LQ TPH4R50ANH1,LQ Hersteller : Toshiba tph4r50anh1_datasheet_en_20191017.pdf Trans MOSFET N-CH Si 100V 138A 8-Pin SOP Advance(N) T/R
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Im Einkaufswagen  Stück im Wert von  UAH