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TPH4R803PL,LQ

TPH4R803PL,LQ Toshiba Semiconductor and Storage

TPH4R803PL_datasheet_en_20170522.pdf?did=58408&prodName=TPH4R803PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.53 EUR
Mindestbestellmenge: 3000
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Technische Details TPH4R803PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 48A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V, Power Dissipation (Max): 830mW (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V.

Weitere Produktangebote TPH4R803PL,LQ nach Preis ab 0.59 EUR bis 1.81 EUR

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TPH4R803PL,LQ TPH4R803PL,LQ Hersteller : Toshiba Semiconductor and Storage TPH4R803PL_datasheet_en_20170522.pdf?did=58408&prodName=TPH4R803PL Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.21 EUR
100+ 0.93 EUR
500+ 0.73 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 13
TPH4R803PL,LQ TPH4R803PL,LQ Hersteller : Toshiba TPH4R803PL_datasheet_en_20170522-2509685.pdf MOSFET POWER MOSFET TRANSISTOR
auf Bestellung 26642 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
29+1.81 EUR
34+ 1.57 EUR
100+ 1.09 EUR
500+ 0.91 EUR
1000+ 0.77 EUR
3000+ 0.67 EUR
6000+ 0.62 EUR
Mindestbestellmenge: 29