TPH4R803PL,LQ

TPH4R803PL,LQ Toshiba Semiconductor and Storage


docget.jsp?did=58408&prodName=TPH4R803PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.51 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH4R803PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 48A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V, Power Dissipation (Max): 830mW (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V.

Weitere Produktangebote TPH4R803PL,LQ nach Preis ab 0.54 EUR bis 1.24 EUR

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TPH4R803PL,LQ TPH4R803PL,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=58408&prodName=TPH4R803PL Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
auf Bestellung 4979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
18+1.00 EUR
100+0.69 EUR
500+0.60 EUR
1000+0.55 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R803PL,LQ TPH4R803PL,LQ Hersteller : Toshiba TPH4R803PL_datasheet_en_20170522-2509685.pdf MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 26538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.24 EUR
10+1.01 EUR
100+0.69 EUR
500+0.58 EUR
1000+0.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH