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TPH5200FNH,L1Q

TPH5200FNH,L1Q Toshiba

FBB171574B59D27287CCCC26D2143BC72C8E6B3E43350E9B24CBDC5C2020EEEC.pdf Hersteller: Toshiba
MOSFETs Power MOSFET N-Channel
auf Bestellung 18399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.96 EUR
10+3.41 EUR
100+2.45 EUR
500+2.2 EUR
1000+2.15 EUR
2500+2.08 EUR
5000+1.87 EUR
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Technische Details TPH5200FNH,L1Q Toshiba

Description: MOSFET N-CH 250V 26A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V.

Weitere Produktangebote TPH5200FNH,L1Q nach Preis ab 2.17 EUR bis 4.96 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TPH5200FNH,L1Q TPH5200FNH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14486&prodName=TPH5200FNH Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 3107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
10+3.41 EUR
100+2.45 EUR
500+2.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TPH5200FNH,L1Q TPH5200FNH,L1Q Hersteller : Toshiba tph5200fnh_datasheet_en_20191018.pdf Trans MOSFET N-CH Si 250V 27A 8-Pin SOP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH5200FNH,L1Q TPH5200FNH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14486&prodName=TPH5200FNH Description: MOSFET N-CH 250V 26A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH