TPH5200FNH,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 250V 26A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.92 EUR |
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Technische Details TPH5200FNH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 26A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V.
Weitere Produktangebote TPH5200FNH,L1Q nach Preis ab 2.06 EUR bis 5.16 EUR
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TPH5200FNH,L1Q | Hersteller : Toshiba |
MOSFETs Power MOSFET N-Channel |
auf Bestellung 33895 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH5200FNH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 250V 26A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V |
auf Bestellung 16337 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH5200FNH,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 250V 27A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |