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TPH5900CNH,L1Q

TPH5900CNH,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=14559&prodName=TPH5900CNH Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.61 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH5900CNH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 150V 9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.6W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V.

Weitere Produktangebote TPH5900CNH,L1Q nach Preis ab 0.62 EUR bis 2.01 EUR

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TPH5900CNH,L1Q TPH5900CNH,L1Q Hersteller : Toshiba TPH5900CNH_datasheet_en_20140225-1916265.pdf MOSFETs UMOSVIII 150V 64mOhm (VGS=10V) SOP-ADV
auf Bestellung 12973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.78 EUR
10+1.39 EUR
100+1.01 EUR
500+0.81 EUR
1000+0.66 EUR
5000+0.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPH5900CNH,L1Q TPH5900CNH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14559&prodName=TPH5900CNH Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 6458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.35 EUR
100+1.03 EUR
500+0.83 EUR
1000+0.73 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TPH5900CNH,L1Q TPH5900CNH,L1Q Hersteller : Toshiba 532docget.jsplangenpidtph5900cnhtypedatasheet.jsplangenpidtph5900cnh.pdf Trans MOSFET N-CH Si 150V 18A 8-Pin SOP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH