TPH5900CNH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 150V 9A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 4V @ 200µA, Power Dissipation (Max): 1.6W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).