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TPH5R60APL,L1Q

TPH5R60APL,L1Q Toshiba

TPH5R60APL_datasheet_en_20191018-2509680.pdf Hersteller: Toshiba
MOSFET POWER MOSFET TRANSISTOR
auf Bestellung 3716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.11 EUR
10+ 1.74 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
2500+ 0.88 EUR
5000+ 0.84 EUR
Mindestbestellmenge: 2
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Technische Details TPH5R60APL,L1Q Toshiba

Description: PB-F POWER MOSFET TRANSISTOR N-C, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V.

Weitere Produktangebote TPH5R60APL,L1Q nach Preis ab 0.87 EUR bis 2.09 EUR

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TPH5R60APL,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=60586&prodName=TPH5R60APL Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 3790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.09 EUR
11+ 1.72 EUR
100+ 1.33 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 9
TPH5R60APL,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=60586&prodName=TPH5R60APL Description: PB-F POWER MOSFET TRANSISTOR N-C
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
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