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TPH5R60APL,L1Q

TPH5R60APL,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=60586&prodName=TPH5R60APL
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR N-C
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.82 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH5R60APL,L1Q Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR N-C, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote TPH5R60APL,L1Q nach Preis ab 0.85 EUR bis 3.1 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
TPH5R60APL,L1Q TPH5R60APL,L1Q Toshiba 7790787989652610765C33DA715D92773441C21AD9479CAC40B64CDB2CFC470B.pdf MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 3572 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.59 EUR
10+1.81 EUR
100+1.18 EUR
500+0.98 EUR
1000+0.91 EUR
2500+0.89 EUR
5000+0.85 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH5R60APL,L1Q TPH5R60APL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=60586&prodName=TPH5R60APL Description: PB-F POWER MOSFET TRANSISTOR N-C
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 7942 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.1 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.89 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH5R60APL,L1Q 7790787989652610765C33DA715D92773441C21AD9479CAC40B64CDB2CFC470B.pdf
TPH5R60APL,L1Q
Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 3572 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.59 EUR
10+1.81 EUR
100+1.18 EUR
500+0.98 EUR
1000+0.91 EUR
2500+0.89 EUR
5000+0.85 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH5R60APL,L1Q docget.jsp?did=60586&prodName=TPH5R60APL
TPH5R60APL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR N-C
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 7942 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.1 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.89 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH