TPH5R906NH,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 1.16 EUR |
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Technische Details TPH5R906NH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 28A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V, Power Dissipation (Max): 1.6W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V.
Weitere Produktangebote TPH5R906NH,L1Q nach Preis ab 1.5 EUR bis 4.29 EUR
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TPH5R906NH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 28A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V |
auf Bestellung 24969 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH5R906NH,L1Q | Hersteller : Toshiba |
MOSFET U-MOSVIII-H 60V 71A 38nC MOSFET |
auf Bestellung 4855 Stücke: Lieferzeit 14-28 Tag (e) |
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