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TPH6R004PL,LQ

TPH6R004PL,LQ Toshiba Semiconductor and Storage

TPH6R004PL_datasheet_en_20170525.pdf?did=55294&prodName=TPH6R004PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 87A/49A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.23 EUR
17+ 1.06 EUR
100+ 0.74 EUR
500+ 0.61 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 15
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Technische Details TPH6R004PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 87A/49A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V, Power Dissipation (Max): 81W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V.

Weitere Produktangebote TPH6R004PL,LQ nach Preis ab 0.65 EUR bis 1.84 EUR

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TPH6R004PL,LQ TPH6R004PL,LQ Hersteller : Toshiba TPH6R004PL_datasheet_en_20170525-1114911.pdf MOSFET N-Ch 40V 2100pF 30nC 87A 81W
auf Bestellung 20865 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
29+1.84 EUR
33+ 1.6 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.78 EUR
3000+ 0.67 EUR
6000+ 0.65 EUR
Mindestbestellmenge: 29
TPH6R004PL,LQ TPH6R004PL,LQ Hersteller : Toshiba Semiconductor and Storage TPH6R004PL_datasheet_en_20170525.pdf?did=55294&prodName=TPH6R004PL Description: MOSFET N-CH 40V 87A/49A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
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