| Anzahl | Preis |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 1.45 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.63 EUR |
| 5000+ | 0.57 EUR |
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Technische Details TPH6R008QM,LQ Toshiba
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SOP Advance (5x5.75), Vgs(th) (Max) @ Id: 3.5V @ 400µA, Power Dissipation (Max): 3W (Ta), 135W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPH6R008QM,LQ nach Preis ab 0.59 EUR bis 2.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| TPH6R008QM,LQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-SOP Advance (5x5.75) Vgs(th) (Max) @ Id: 3.5V @ 400µA Power Dissipation (Max): 3W (Ta), 135W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| TPH6R008QM,LQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-SOP Advance (5x5.75) Vgs(th) (Max) @ Id: 3.5V @ 400µA Power Dissipation (Max): 3W (Ta), 135W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 9980 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPH6R008QM,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.59 EUR |
| TPH6R008QM,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5.75)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.55 EUR |
| 12+ | 1.57 EUR |
| 25+ | 1.31 EUR |
| 100+ | 1.02 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.72 EUR |
| 2500+ | 0.64 EUR |