auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.50 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.96 EUR |
| 250+ | 0.94 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.66 EUR |
| 2500+ | 0.62 EUR |
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Technische Details TPH6R008QM,LQ Toshiba
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V, Power Dissipation (Max): 3W (Ta), 135W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 400µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V.
Weitere Produktangebote TPH6R008QM,LQ nach Preis ab 0.59 EUR bis 2.55 EUR
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| TPH6R008QM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V Power Dissipation (Max): 3W (Ta), 135W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 400µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH6R008QM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V Power Dissipation (Max): 3W (Ta), 135W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 400µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
auf Bestellung 9980 Stücke: Lieferzeit 10-14 Tag (e) |
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