TPH6R30ANL,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 66A/45A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.95 EUR |
| 15000+ | 0.87 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TPH6R30ANL,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 66A/45A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V.
Weitere Produktangebote TPH6R30ANL,L1Q nach Preis ab 0.77 EUR bis 3.69 EUR
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TPH6R30ANL,L1Q | Toshiba |
MOSFETs U-MOSVIII-H 100V 66A 55nC MOSFET |
auf Bestellung 13527 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH6R30ANL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 66A/45A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Power Dissipation (Max): 2.5W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V |
auf Bestellung 88800 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Toshiba
MOSFETs U-MOSVIII-H 100V 66A 55nC MOSFET
MOSFETs U-MOSVIII-H 100V 66A 55nC MOSFET
auf Bestellung 13527 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.83 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.9 EUR |
| 5000+ | 0.77 EUR |
| TPH6R30ANL,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 66A/45A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Description: MOSFET N-CH 100V 66A/45A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 88800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.69 EUR |
| 10+ | 2.34 EUR |
| 50+ | 1.76 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.25 EUR |