TPH7R006PL,L1Q

TPH7R006PL,L1Q Toshiba Semiconductor and Storage


TPH7R006PL_datasheet_en_20191018.pdf?did=55699&prodName=TPH7R006PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.47 EUR
10000+ 0.44 EUR
Mindestbestellmenge: 5000
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Technische Details TPH7R006PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 60A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V, Power Dissipation (Max): 81W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V.

Weitere Produktangebote TPH7R006PL,L1Q nach Preis ab 0.5 EUR bis 1.91 EUR

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TPH7R006PL,L1Q TPH7R006PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPH7R006PL_datasheet_en_20191018.pdf?did=55699&prodName=TPH7R006PL Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
auf Bestellung 23427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.32 EUR
16+ 1.14 EUR
100+ 0.79 EUR
500+ 0.66 EUR
1000+ 0.56 EUR
2000+ 0.5 EUR
Mindestbestellmenge: 14
TPH7R006PL,L1Q TPH7R006PL,L1Q Hersteller : Toshiba TPH7R006PL_datasheet_en_20191018-1075496.pdf MOSFET N-Ch 60V 1440pF 27nC 79A 81W
auf Bestellung 14622 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
28+1.91 EUR
31+ 1.69 EUR
100+ 1.16 EUR
500+ 0.97 EUR
1000+ 0.74 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 28