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Technische Details TPH7R006PL,L1Q Toshiba
Description: MOSFET N-CH 60V 60A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Power Dissipation (Max): 81W (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPH7R006PL,L1Q nach Preis ab 0.52 EUR bis 2.51 EUR
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TPH7R006PL,L1Q | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 60A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH7R006PL,L1Q | Toshiba |
MOSFETs N-Ch 60V 1440pF 27nC 79A 81W |
auf Bestellung 2329 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH7R006PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 29133 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH7R006PL,L1Q | Toshiba |
Trans MOSFET N-CH Si 60V 79A 8-Pin SOP Advance T/R |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TPH7R006PL,L1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.61 EUR |
| 10000+ | 0.57 EUR |
| 15000+ | 0.55 EUR |
| 25000+ | 0.52 EUR |
| TPH7R006PL,L1Q |
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Hersteller: Toshiba
MOSFETs N-Ch 60V 1440pF 27nC 79A 81W
MOSFETs N-Ch 60V 1440pF 27nC 79A 81W
auf Bestellung 2329 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.37 EUR |
| 10+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.63 EUR |
| 2500+ | 0.62 EUR |
| 5000+ | 0.56 EUR |
| TPH7R006PL,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 29133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.51 EUR |
| 14+ | 1.58 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.74 EUR |
| 2000+ | 0.68 EUR |
| TPH7R006PL,L1Q |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 60V 79A 8-Pin SOP Advance T/R
Trans MOSFET N-CH Si 60V 79A 8-Pin SOP Advance T/R
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)