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TPH7R506NH,L1Q

TPH7R506NH,L1Q Toshiba Semiconductor and Storage

TPH7R506NH_datasheet_en_20140107.pdf?did=13359&prodName=TPH7R506NH
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.04 EUR
Mindestbestellmenge: 5000 Stücke
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Technische Details TPH7R506NH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 22A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V.

Weitere Produktangebote TPH7R506NH,L1Q nach Preis ab 1.09 EUR bis 3.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TPH7R506NH,L1Q TPH7R506NH,L1Q Toshiba F3FC1FD98F0B70E8F2B1806B737B1A4BED558CF95461E7B6F52E1B4F82043CA4.pdf MOSFETs U-MOSVIII-H 60V 55A 31nC MOSFET
auf Bestellung 15529 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.64 EUR
10+2.32 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.15 EUR
2500+1.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPH7R506NH,L1Q TPH7R506NH,L1Q Toshiba Semiconductor and Storage TPH7R506NH_datasheet_en_20140107.pdf?did=13359&prodName=TPH7R506NH Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
auf Bestellung 26067 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
10+2.43 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.2 EUR
2000+1.11 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPH7R506NH,L1Q F3FC1FD98F0B70E8F2B1806B737B1A4BED558CF95461E7B6F52E1B4F82043CA4.pdf
TPH7R506NH,L1Q
Hersteller: Toshiba
MOSFETs U-MOSVIII-H 60V 55A 31nC MOSFET
auf Bestellung 15529 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.64 EUR
10+2.32 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.15 EUR
2500+1.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPH7R506NH,L1Q TPH7R506NH_datasheet_en_20140107.pdf?did=13359&prodName=TPH7R506NH
TPH7R506NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
auf Bestellung 26067 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.81 EUR
10+2.43 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.2 EUR
2000+1.11 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH