Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TPH7R506NH,L1Q
TPH7R506NH,L1Q

TPH7R506NH,L1Q Toshiba Semiconductor and Storage

TPH7R506NH_datasheet_en_20140107.pdf?did=13359&prodName=TPH7R506NH Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.87 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TPH7R506NH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 22A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V.

Weitere Produktangebote TPH7R506NH,L1Q nach Preis ab 0.92 EUR bis 3.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TPH7R506NH,L1Q TPH7R506NH,L1Q Hersteller : Toshiba TPH7R506NH_datasheet_en_20140107-1140043.pdf MOSFETs U-MOSVIII-H 60V 55A 31nC MOSFET
auf Bestellung 17217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.29 EUR
10+1.8 EUR
25+1.71 EUR
100+1.26 EUR
250+1.25 EUR
500+1.02 EUR
1000+0.92 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPH7R506NH,L1Q TPH7R506NH,L1Q Hersteller : Toshiba Semiconductor and Storage TPH7R506NH_datasheet_en_20140107.pdf?did=13359&prodName=TPH7R506NH Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
auf Bestellung 26067 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.04 EUR
100+1.38 EUR
500+1.1 EUR
1000+1.01 EUR
2000+0.93 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH