Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TPH8R008NH,L1Q
TPH8R008NH,L1Q

TPH8R008NH,L1Q Toshiba Semiconductor and Storage

docget.jsp?did=12775&prodName=TPH8R008NH Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.11 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details TPH8R008NH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 80V 34A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V, Power Dissipation (Max): 1.6W (Ta), 61W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 40 V.

Weitere Produktangebote TPH8R008NH,L1Q nach Preis ab 1.46 EUR bis 2.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TPH8R008NH,L1Q TPH8R008NH,L1Q Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=12775&prodName=TPH8R008NH Description: MOSFET N-CH 80V 34A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 40 V
auf Bestellung 9970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.55 EUR
100+ 2.3 EUR
500+ 1.89 EUR
1000+ 1.57 EUR
2000+ 1.46 EUR
Mindestbestellmenge: 7
TPH8R008NH,L1Q TPH8R008NH,L1Q Hersteller : Toshiba TPH8R008NH_datasheet_en_20140218-1139919.pdf MOSFET N-Ch 80V 2300pF 35nC 8.0mOhm 63A 61W
Produkt ist nicht verfügbar