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TPH8R80ANH,L1Q

TPH8R80ANH,L1Q Toshiba Semiconductor and Storage

TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.2 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH8R80ANH,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N CH 100V 32A 8-SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V, Power Dissipation (Max): 1.6W (Ta), 61W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V.

Weitere Produktangebote TPH8R80ANH,L1Q nach Preis ab 1.22 EUR bis 2.83 EUR

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TPH8R80ANH,L1Q TPH8R80ANH,L1Q Hersteller : Toshiba TPH8R80ANH_datasheet_en_20140218-1139965.pdf MOSFETs N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.71 EUR
10+2.25 EUR
25+2.09 EUR
100+1.76 EUR
250+1.65 EUR
500+1.41 EUR
1000+1.22 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPH8R80ANH,L1Q TPH8R80ANH,L1Q Hersteller : Toshiba Semiconductor and Storage TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 29260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+2.31 EUR
100+1.64 EUR
500+1.39 EUR
1000+1.26 EUR
2000+1.23 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH