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TPH8R903NL,LQ

TPH8R903NL,LQ Toshiba Semiconductor and Storage

TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.9 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPH8R903NL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 30V 20A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V, Power Dissipation (Max): 1.6W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V.

Weitere Produktangebote TPH8R903NL,LQ nach Preis ab 0.46 EUR bis 1.56 EUR

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TPH8R903NL,LQ TPH8R903NL,LQ Hersteller : Toshiba TPH8R903NL_datasheet_en_20140218-1915982.pdf MOSFETs N-Ch DTMOS VII-H 24W 630pF 38A 30V
auf Bestellung 2138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.56 EUR
10+1.02 EUR
100+0.7 EUR
500+0.55 EUR
1000+0.51 EUR
3000+0.46 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPH8R903NL,LQ TPH8R903NL,LQ Hersteller : Toshiba Semiconductor and Storage TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL Description: MOSFET N CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH