TPH9R506PL,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.55 EUR |
| 6000+ | 0.51 EUR |
| 9000+ | 0.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPH9R506PL,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Power Dissipation (Max): 830mW (Ta), 81W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPH9R506PL,LQ nach Preis ab 0.64 EUR bis 2.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPH9R506PL,LQ | Toshiba |
MOSFET POWER MOSFET TRANSISTOR |
auf Bestellung 14247 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
TPH9R506PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 34A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 830mW (Ta), 81W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 31414 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPH9R506PL,LQ |
|
Hersteller: Toshiba
MOSFET POWER MOSFET TRANSISTOR
MOSFET POWER MOSFET TRANSISTOR
auf Bestellung 14247 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.53 EUR |
| 10+ | 1.35 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.82 EUR |
| TPH9R506PL,LQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 31414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 13+ | 1.36 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |