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TPHR6503PL1,LQ

TPHR6503PL1,LQ Toshiba Semiconductor and Storage

TPHR6503PL1_datasheet_en_20200626.pdf?did=69019&prodName=TPHR6503PL1
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.8 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPHR6503PL1,LQ Toshiba Semiconductor and Storage

Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 210W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V.

Weitere Produktangebote TPHR6503PL1,LQ nach Preis ab 1.46 EUR bis 6.18 EUR

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TPHR6503PL1,LQ TPHR6503PL1,LQ Toshiba tphr6503pl1_datasheet_en_20200626.pdf Trans MOSFET N-CH Si 30V 420A 8-Pin SOP Advance(N) T/R
auf Bestellung 1394 Stücke:
Lieferzeit 14-21 Tag (e)
79+2.24 EUR
100+1.81 EUR
500+1.59 EUR
1000+1.46 EUR
Mindestbestellmenge: 79 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPHR6503PL1,LQ TPHR6503PL1,LQ Toshiba tphr6503pl1_datasheet_en_20200626.pdf Trans MOSFET N-CH Si 30V 420A 8-Pin SOP Advance(N) T/R
auf Bestellung 1394 Stücke:
Lieferzeit 14-21 Tag (e)
35+5.14 EUR
53+3.21 EUR
100+2.11 EUR
500+1.71 EUR
1000+1.54 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPHR6503PL1,LQ TPHR6503PL1,LQ Toshiba E6FC016203B9E0B2E09619E59CFE72D4353C4AC727C37951B0B896F6B88D18A5.pdf MOSFETs UMOS9 SOP-ADV(N) RDSon=0.65mohm(max)
auf Bestellung 11247 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.06 EUR
10+3.94 EUR
100+2.64 EUR
500+2.23 EUR
1000+2.12 EUR
2500+2.01 EUR
5000+1.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPHR6503PL1,LQ TPHR6503PL1,LQ Toshiba Semiconductor and Storage TPHR6503PL1_datasheet_en_20200626.pdf?did=69019&prodName=TPHR6503PL1 Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 8788 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.18 EUR
10+4.01 EUR
100+2.78 EUR
500+2.25 EUR
1000+2.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPHR6503PL1,LQ tphr6503pl1_datasheet_en_20200626.pdf
TPHR6503PL1,LQ
Hersteller: Toshiba
Trans MOSFET N-CH Si 30V 420A 8-Pin SOP Advance(N) T/R
auf Bestellung 1394 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
79+2.24 EUR
100+1.81 EUR
500+1.59 EUR
1000+1.46 EUR
Mindestbestellmenge: 79 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPHR6503PL1,LQ tphr6503pl1_datasheet_en_20200626.pdf
TPHR6503PL1,LQ
Hersteller: Toshiba
Trans MOSFET N-CH Si 30V 420A 8-Pin SOP Advance(N) T/R
auf Bestellung 1394 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+5.14 EUR
53+3.21 EUR
100+2.11 EUR
500+1.71 EUR
1000+1.54 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TPHR6503PL1,LQ E6FC016203B9E0B2E09619E59CFE72D4353C4AC727C37951B0B896F6B88D18A5.pdf
TPHR6503PL1,LQ
Hersteller: Toshiba
MOSFETs UMOS9 SOP-ADV(N) RDSon=0.65mohm(max)
auf Bestellung 11247 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.06 EUR
10+3.94 EUR
100+2.64 EUR
500+2.23 EUR
1000+2.12 EUR
2500+2.01 EUR
5000+1.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TPHR6503PL1,LQ TPHR6503PL1_datasheet_en_20200626.pdf?did=69019&prodName=TPHR6503PL1
TPHR6503PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 8788 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.18 EUR
10+4.01 EUR
100+2.78 EUR
500+2.25 EUR
1000+2.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH