Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TPHR6503PL1,LQ
TPHR6503PL1,LQ

TPHR6503PL1,LQ Toshiba Semiconductor and Storage

TPHR6503PL1_datasheet_en_20200626.pdf?did=69019&prodName=TPHR6503PL1 Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 2154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.45 EUR
100+ 2.84 EUR
500+ 2.4 EUR
1000+ 2.04 EUR
2000+ 1.94 EUR
Mindestbestellmenge: 6
Produktrezensionen
Produktbewertung abgeben

Technische Details TPHR6503PL1,LQ Toshiba Semiconductor and Storage

Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 210W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V.

Weitere Produktangebote TPHR6503PL1,LQ nach Preis ab 2.28 EUR bis 5.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TPHR6503PL1,LQ TPHR6503PL1,LQ Hersteller : Toshiba TPHR6503PL1_datasheet_en_20200626-2449209.pdf MOSFET UMOS9 SOP-ADV(N) RDSon=0.65mohm(max)
auf Bestellung 38094 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.07 EUR
13+ 4.21 EUR
100+ 3.35 EUR
250+ 3.28 EUR
500+ 2.83 EUR
1000+ 2.29 EUR
2500+ 2.28 EUR
Mindestbestellmenge: 11
TPHR6503PL1,LQ TPHR6503PL1,LQ Hersteller : Toshiba Semiconductor and Storage TPHR6503PL1_datasheet_en_20200626.pdf?did=69019&prodName=TPHR6503PL1 Description: UMOS9 SOP-ADV(N) PD=210W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
Produkt ist nicht verfügbar