
auf Bestellung 35255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.46 EUR |
10+ | 1.76 EUR |
100+ | 1.21 EUR |
500+ | 1.16 EUR |
5000+ | 1.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPHR9203PL1,LQ Toshiba
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V.
Weitere Produktangebote TPHR9203PL1,LQ nach Preis ab 1.08 EUR bis 3.66 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
TPHR9203PL1,LQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-SOP Advance (5x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V |
auf Bestellung 6098 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
TPHR9203PL1,LQ | Hersteller : Toshiba |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
TPHR9203PL1,LQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-SOP Advance (5x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V |
Produkt ist nicht verfügbar |