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TPN11003NL,LQ

TPN11003NL,LQ Toshiba Semiconductor and Storage

TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TPN11003NL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 30V 11A 8TSON-ADV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V, Power Dissipation (Max): 700mW (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V.

Weitere Produktangebote TPN11003NL,LQ nach Preis ab 0.37 EUR bis 1.72 EUR

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TPN11003NL,LQ TPN11003NL,LQ Hersteller : Toshiba TPN11003NL_datasheet_en_20140218-1915959.pdf MOSFETs N-Ch DTMOS VII-H 19W 510pF 31A 30V
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.72 EUR
10+1.06 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.45 EUR
3000+0.4 EUR
6000+0.37 EUR
Mindestbestellmenge: 2
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TPN11003NL,LQ TPN11003NL,LQ Hersteller : Toshiba 432tpn11003nl_datasheet_en_20140218.pdf.pdf Trans MOSFET N-CH Si 30V 31A 8-Pin TSON EP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN11003NL,LQ TPN11003NL,LQ Hersteller : Toshiba 432tpn11003nl_datasheet_en_20140218.pdf.pdf Trans MOSFET N-CH Si 30V 31A 8-Pin TSON EP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN11003NL,LQ TPN11003NL,LQ Hersteller : Toshiba Semiconductor and Storage TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH