TPN11003NL,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.46 EUR |
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Technische Details TPN11003NL,LQ Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 2.3V @ 100µA, Power Dissipation (Max): 700mW (Ta), 19W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPN11003NL,LQ nach Preis ab 0.47 EUR bis 2.01 EUR
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TPN11003NL,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 11A 8TSON-ADV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V Power Dissipation (Max): 700mW (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
auf Bestellung 5779 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN11003NL,LQ | Hersteller : Toshiba |
MOSFETs N-Ch DTMOS VII-H 19W 510pF 31A 30V |
auf Bestellung 3391 Stücke: Lieferzeit 10-14 Tag (e) |
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